Journalartikel

Autorenliste: Yoo, HI; Schmalzried, H; Martin, M; Janek, J

Jahr der Veröffentlichung: 1990

Seiten: 129-142

Zeitschrift: Zeitschrift für Physikalische Chemie

Bandnummer: 168

Heftnummer: 2

ISSN: 0942-9352

eISSN: 0044-3336

DOI Link: https://doi.org/10.1524/zpch.1990.168.Part_2.129

Verlag: De Gruyter

Abstract: 
In semiconducting transition metal oxides, e.g. Co1-delta-O, an electronic flux may be induced indirectly by an ion flux even in the absence of its own direct cause, a gradient of the electronic electrochemical potential. The magnitude of this cross effect is determined by the charge of transport, alpha-Co, of the migrating ion, the absolute value of which may be interpreted as the number of electrons dragged by a Co2+ or the number of holes dragged by a V"(Co). The formal and exhaustive analysis of this phenomenon is made on the basis of a proper distinction between building units and structure elements of the crystal. A preliminary result of the experimental determination of the cross effect, and the reanalysis of the literature data reveal that, for Co1-delta-O with V'(Co) prevailing, alpha-Co is by no means negligible. The implications and consequences of this non-zero cross effect are discussed.

Harvard-Zitierstil: Yoo, H., Schmalzried, H., Martin, M. and Janek, J. (1990) Cross effect between electronic and ionic flows in semiconducting transition metal oxides, Zeitschrift für Physikalische Chemie, 168(2), pp. 129-142. https://doi.org/10.1524/zpch.1990.168.Part_2.129

APA-Zitierstil: Yoo, H., Schmalzried, H., Martin, M., & Janek, J. (1990). Cross effect between electronic and ionic flows in semiconducting transition metal oxides. Zeitschrift für Physikalische Chemie. 168(2), 129-142. https://doi.org/10.1524/zpch.1990.168.Part_2.129