Journal article

Authors list: Meyer, Bruno K.; Sann, Joachim; Eisermann, Sebastian; Lautenschlaeger, Stefan; Wagner, Markus R.; Kaiser, Martin; Callsen, Gordon; Reparaz, Juan S.; Hoffmann, Axel

Publication year: 2010

Journal: Physical Review B

Volume number: 82

Issue number: 11

ISSN: 1098-0121

DOI Link: https://doi.org/10.1103/PhysRevB.82.115207

Publisher: American Physical Society

Abstract: 
ZnO shows a great variety of richly structured luminescence lines in a very narrow energy range of 30 meV below the free A-exciton line. At very low temperatures the majority of these lines can be explained by radiative recombination of excitons bound to neutral and ionized donors. With increasing temperature even more photoluminescence (PL) lines appear with activation energies which indicate the involvement of excited states of the bound exciton complexes. Based on high-resolution temperature-dependent luminescence and luminescence excitation experiments we investigate the excited states properties of donor bound excitons in ZnO. Several possible configurations of excited states could be distinguished: (i) excitons which involve a hole from the B-instead of the A-valence band, (ii) vibrational-rotational excited states of the excitons, and (iii) electronic excited states of the excitons. Magneto-PL measurements of the ground and vibrational-rotational excited states corroborate the identification of the excited states with comparable g-factors for all shallow donor bound excitons. In addition to the excited states, energy transfer processes via the ionized bound excitons and free exciton polaritons are observed. The experimental results are supported by theoretical calculations and demonstrate that ZnO is a unique compound semiconductor where the basics of atomic and molecular physics can be studied and understood in a solid state matrix.

Harvard Citation style: Meyer, B., Sann, J., Eisermann, S., Lautenschlaeger, S., Wagner, M., Kaiser, M., et al. (2010) Excited state properties of donor bound excitons in ZnO, Physical Review B, 82(11), Article 115207. https://doi.org/10.1103/PhysRevB.82.115207

APA Citation style: Meyer, B., Sann, J., Eisermann, S., Lautenschlaeger, S., Wagner, M., Kaiser, M., Callsen, G., Reparaz, J., & Hoffmann, A. (2010). Excited state properties of donor bound excitons in ZnO. Physical Review B. 82(11), Article 115207. https://doi.org/10.1103/PhysRevB.82.115207