Journalartikel

Contact formation of C60 to thin films of formamidinium tin iodide


AutorenlisteHorn, Jonas; Schlettwein, Derck

Jahr der Veröffentlichung2020

Seiten2897-2904

ZeitschriftJournal of Materials Research

Bandnummer35

Heftnummer21

ISSN0884-2914

eISSN2044-5326

DOI Linkhttps://doi.org/10.1557/jmr.2020.263

VerlagSpringer


Abstract
Lead-free perovskite layers may provide a good alternative to the commonly used lead-halide-based perovskite absorber layers in photovoltaics. Energy level alignment of the active semiconductor with contact layers is a key factor in device performance. Kelvin probe force microscopy was used during vapor deposition of C-60 onto formamidinium tin iodide to investigate contact formation with detailed local resolution of these materials that are significant for photovoltaic cells. Significant differences dependent on the growth rate of C-60 were detected. Sufficiently high deposition rates were essential to reach compact C-60 films needed for good contact. A space charge layer larger than 90 nm within the C-60 layer was established without indication of interfacial dipoles. The present analysis gives a clear indication of a well-functioning contact of fullerenes to formamidinium tin iodide that is suitable for the use in photovoltaic devices provided that thin compact fullerene films are formed.



Autoren/Herausgeber




Zitierstile

Harvard-ZitierstilHorn, J. and Schlettwein, D. (2020) Contact formation of C60 to thin films of formamidinium tin iodide, Journal of Materials Research, 35(21), pp. 2897-2904. https://doi.org/10.1557/jmr.2020.263

APA-ZitierstilHorn, J., & Schlettwein, D. (2020). Contact formation of C60 to thin films of formamidinium tin iodide. Journal of Materials Research. 35(21), 2897-2904. https://doi.org/10.1557/jmr.2020.263



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