Journal article

Contact formation of C60 to thin films of formamidinium tin iodide


Authors listHorn, Jonas; Schlettwein, Derck

Publication year2020

Pages2897-2904

JournalJournal of Materials Research

Volume number35

Issue number21

ISSN0884-2914

eISSN2044-5326

DOI Linkhttps://doi.org/10.1557/jmr.2020.263

PublisherSpringer


Abstract
Lead-free perovskite layers may provide a good alternative to the commonly used lead-halide-based perovskite absorber layers in photovoltaics. Energy level alignment of the active semiconductor with contact layers is a key factor in device performance. Kelvin probe force microscopy was used during vapor deposition of C-60 onto formamidinium tin iodide to investigate contact formation with detailed local resolution of these materials that are significant for photovoltaic cells. Significant differences dependent on the growth rate of C-60 were detected. Sufficiently high deposition rates were essential to reach compact C-60 films needed for good contact. A space charge layer larger than 90 nm within the C-60 layer was established without indication of interfacial dipoles. The present analysis gives a clear indication of a well-functioning contact of fullerenes to formamidinium tin iodide that is suitable for the use in photovoltaic devices provided that thin compact fullerene films are formed.



Citation Styles

Harvard Citation styleHorn, J. and Schlettwein, D. (2020) Contact formation of C60 to thin films of formamidinium tin iodide, Journal of Materials Research, 35(21), pp. 2897-2904. https://doi.org/10.1557/jmr.2020.263

APA Citation styleHorn, J., & Schlettwein, D. (2020). Contact formation of C60 to thin films of formamidinium tin iodide. Journal of Materials Research. 35(21), 2897-2904. https://doi.org/10.1557/jmr.2020.263


Last updated on 2025-24-07 at 10:24