Journalartikel

Autorenliste: Lautenschlaeger, Stefan; Sann, Joachim; Klar, Peter J.; Piechotka, M.; Meyer, Bruno K.

Jahr der Veröffentlichung: 2009

Seiten: 383-386

Zeitschrift: physica status solidi (b) – basic solid state physics

Bandnummer: 246

Heftnummer: 2

ISSN: 0370-1972

DOI Link: https://doi.org/10.1002/pssb.200844347

Verlag: Wiley

Abstract: 
It was our aim to explore the growth of Mg(x)Z(1-x)O epliayers on ZnO substrates using CVD at substrate temperature around 650 degrees C which is considerably lower than necessary for the MOCVD growth which requires substrate temperatures above 900 degrees C. Metallic precursors (Zn, Mg) were used together with NO2 as oxygen precursor. The Mg content was determined from the shift of longitudinal optical phonon line as a function of the Mg composition. The properties of the films were investigated by low temperature photoluminescence. Epitaxial MgxZn1-xO films with fixed Mg compositions required an individual adjustment of the Mg reservoir temperature. We, therefore, explored the possibility of a combinatorial growth i.e. achieving a Mg gradient within one sample. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Harvard-Zitierstil: Lautenschlaeger, S., Sann, J., Klar, P., Piechotka, M. and Meyer, B. (2009) Combinatorial growth of MgxZn1-xO epilayers by chemical vapor deposition, physica status solidi (b) – basic solid state physics, 246(2), pp. 383-386. https://doi.org/10.1002/pssb.200844347

APA-Zitierstil: Lautenschlaeger, S., Sann, J., Klar, P., Piechotka, M., & Meyer, B. (2009). Combinatorial growth of MgxZn1-xO epilayers by chemical vapor deposition. physica status solidi (b) – basic solid state physics. 246(2), 383-386. https://doi.org/10.1002/pssb.200844347